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buk7508-55a n-channel trenchmos standard level fet rev. 03 ? 14 june 2010 product data sheet 1. product profile 1.1 general description standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use in automotive critical applications. 1.2 features and benefits ? low conduction losses due to low on-state resistance ? q101 compliant ? suitable for standard level gate drive sources ? suitable for thermally demanding environments due to 175 c rating 1.3 applications ? 12 v and 24 v loads ? automotive systems ? general purpose power switching ? motors, lamps and solenoids 1.4 quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175c --55v i d drain current v gs =10v; t mb =25c; see figure 1 ; see figure 3 [1] --75a p tot total power dissipation t mb = 25 c; see figure 2 --254w static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j = 175 c; see figure 11 ; see figure 12 --16m ? v gs =10v; i d =25a; t j =25c; see figure 11 ; see figure 12 -6.88m ?
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 2 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet [1] continuous current is limited by package. 2. pinning information 3. ordering information avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =75a; v sup 55 v; r gs =50 ? ; v gs =10v; t j(init) = 25 c; unclamped --670mj dynamic characteristics q gd gate-drain charge v gs =0v; i d =25a; v ds =44v; t j =25c; see figure 13 -35-nc table 1. quick reference data ?continued symbol parameter conditions min typ max unit table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot78 (to-220ab) 2 d drain 3ssource mb d mounting base; connected to drain 12 mb 3 s d g m bb076 table 3. ordering information type number package name description version buk7508-55a to-220ab plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 3 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet 4. limiting values [1] current is limited by power dissipation chip rating. [2] continuous current is limited by package. table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175c --55v v dgr drain-gate voltage r gs =20k ? --55v v gs gate-source voltage -20 - 20 v i d drain current t mb =25c; v gs =10v; see figure 1 ; see figure 3 [1] - - 126 a t mb =100c; v gs = 10 v; see figure 1 [2] --75a t mb =25c; v gs =10v; see figure 1 ; see figure 3 [2] --75a i dm peak drain current t mb =25c; t p 10 s; pulsed; see figure 3 - - 504 a p tot total power dissipation t mb =25c; see figure 2 - - 254 w t stg storage temperature -55 - 175 c t j junction temperature -55 - 175 c source-drain diode i s source current t mb =25c [2] --75a [1] - - 126 a i sm peak source current t p 10 s; pulsed; t mb = 25 c - - 504 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =75a; v sup 55 v; r gs =50 ? ; v gs =10v; t j(init) = 25 c; unclamped - - 670 mj
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 4 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet fig 1. continuous drain current as a function of mounting base temperature fig 2. normalized total power dissipation as a function of mounting base temperature fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage t mb ( c) 200 150 50 175 125 75 25 100 03nh50 60 20 100 140 40 80 120 i d (a) 0 capped at 75 a due to package t mb ( c) 0 200 150 50 100 03na19 40 80 120 p der (%) 0 03nh48 1 10 10 2 10 3 1 10 10 2 v ds (v) i d (a) dc 100 ms 10 ms r dson = v ds / i d 1 ms t p = 10 s 100 s capped at 75 a due to package
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 5 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 4 --0.59k/w r th(j-a) thermal resistance from junction to ambient vertical in still air - 60 - k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration 03nh49 single shot 0.2 0.1 0.05 0.02 10 ? 3 10 ? 2 10 ? 1 1 10 ? 6 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 t p (s) z th(j-mb) (k/w) = 0.5 t p t p t p t t =
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 6 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =0.25ma; v gs =0v; t j = -55 c 50 - - v i d =0.25ma; v gs =0v; t j =25c 55--v v gs(th) gate-source threshold voltage i d =1ma; v ds =v gs ; t j = 175 c; see figure 10 1--v i d =1ma; v ds =v gs ; t j =25c; see figure 10 234v i d =1ma; v ds =v gs ; t j =-55c; see figure 10 --4.4v i dss drain leakage current v ds =55v; v gs =0v; t j = 175 c - - 500 a v ds =55v; v gs =0v; t j = 25 c - 0.05 10 a i gss gate leakage current v ds =0v; v gs =20v; t j = 25 c - 2 100 na v ds =0v; v gs =-20v; t j = 25 c - 2 100 na r dson drain-source on-state resistance v gs =10v; i d =25a; t j = 175 c; see figure 11 ; see figure 12 --16m ? v gs =10v; i d =25a; t j =25c; see figure 11 ; see figure 12 -6.88m ? dynamic characteristics q g(tot) total gate charge i d =25a; v ds =44v; v gs =0v; t j =25c; see figure 13 -76-nc q gs gate-source charge - 16 - nc q gd gate-drain charge - 35 - nc c iss input capacitance v gs =0v; v ds =25v; f=1mhz; t j =25c; see figure 14 - 3264 4352 pf c oss output capacitance - 719 863 pf c rss reverse transfer capacitance - 390 533 pf t d(on) turn-on delay time v ds =30v; r l =1.2 ? ; v gs =5v; r g(ext) =10 ? ; t j =25c -24-ns t r rise time - 94 - ns t d(off) turn-off delay time - 100 - ns t f fall time - 80 - ns l d internal drain inductance from contact screw on mounting base to centre ; t j =25c -3.5-nh from drain lead 6 mm from package to centre of die ; t j =25c -4.5-nh l s internal source inductance from source lead to source bond pad ; t j =25c -7.5-nh source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 15 - 0.85 1.2 v t rr reverse recovery time i s =75a; di s /dt = -100 a/s; v gs =-10v; v ds =30v; t j =25c -65-ns q r recovered charge - 170 - nc
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 7 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of gate-source voltage; typical values fig 7. sub-threshold drain current as a function of gate-source voltage fig 8. forward transconductance as a function of drain current; typical values 03nh45 160 140 120 100 80 60 40 20 0 i d (a) 0246810 v ds (v) 5.0 v 6.0 v 6.5 v 7.0 v 18 v 8.0 v 10 v v gs = 4.5 v 5.5 v 03nh44 6 8 10 12 14 5101520 v gs (v) r dson (m ) 03aa35 v gs (v) 06 4 2 10 ? 4 10 ? 5 10 ? 2 10 ? 3 10 ? 1 i d (a) 10 ? 6 min typ max 03nh42 0 20 40 60 0 20 40 60 80 100 i d (a) g fs (s)
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 8 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet fig 9. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 10. gate-source threshold voltage as a function of junction temperature fig 11. drain-source on-state resistance as a function of drain current; typical values fig 12. normalized drain-source on-state resistance factor as a function of junction temperature 03nh43 0 20 40 60 80 100 02468 v gs (v) i d (a) t j = 175 c t j = 25 c t j ( c) ? 60 180 120 060 03aa32 2 3 1 4 5 v gs(th) (v) 0 max typ min 03nh46 5 10 15 20 25 0 20 40 60 80 100 120 i d (a) r dson (m ) v gs = 5.5 (v) 6 6.5 7.5 10 9 7 03ne89 0 0.5 1 1.5 2 -60 0 60 120 180 t j ( c) a
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 9 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet fig 13. gate-source voltage as a function of turn-on gate charge; typical values fig 14. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values fig 15. reverse diode current as a function of reverse diode voltage; typical values 03nh41 0 2 4 6 8 10 020406080 q g (nc) v gs (v) v dd = 14 (v) v dd = 44 (v) 03nh47 0 1000 2000 3000 4000 5000 6000 7000 10 ? 2 10 ? 1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss 03nh40 100 80 60 40 20 0 i s (a) v sd (v) 0 0.2 1.0 1.2 0.4 0.6 0.8 t j = 175 c t j = 25 c
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 10 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet 7. package outline fig 16. package outline sot78 (to-220ab) references outline version european projection issue date iec jedec jeita sot78 sc-46 3-lead to-220ab sot7 8 08-04-23 08-06-13 notes 1. lead shoulder designs may vary. 2. dimension includes excess dambar. unit a mm 4.7 4.1 1.40 1.25 0.9 0.6 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 15.0 12.8 3.30 2.79 3.8 3.5 a 1 dimensions (mm are the original dimensions) p lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab 0 5 10 mm scale b b 1 (2) 1.6 1.0 c d 1.3 1.0 b 2 (2) d 1 e e 2.54 l l 1 (1) l 2 (1) max. 3.0 p q 3.0 2.7 q 2.6 2.2 d d 1 q p l 123 l 1 (1) b 1 (2) (3 ) b 2 (2) (2 ) e e b(3 ) a e a 1 c q l 2 (1) mounting base
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 11 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes buk7508-55a v.3 20100614 product data sheet - buk7508_7608_55a v.2 modifications: ? the format of this data sheet has been redesi gned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? type number buk7508-55a separated from data sheet buk7508_7608_55a v.2. buk7508_7608_55a v.2 20020117 product specification - -
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 12 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qualified for use in automotive applications. the product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be ex pected to result in personal injury, death or severe property or environmental dam age. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualific ation this document contains data fr om the preliminary specification. product [short] data sheet production this doc ument contains the product specification.
buk7508-55a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 14 june 2010 13 of 14 nxp semiconductors buk7508-55a n-channel trenchmos standard level fet export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 9.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors buk7508-55a n-channel trenchmos standard level fet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 14 june 2010 document identifier: buk7508-55a please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 contact information. . . . . . . . . . . . . . . . . . . . . .13

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